As-Implanted Lattice Sites of Dopants in Semiconductors

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

1183-1188

DOI:

10.4028/www.scientific.net/MSF.10-12.1183

Citation:

H. Hofsäss et al., "As-Implanted Lattice Sites of Dopants in Semiconductors", Materials Science Forum, Vols. 10-12, pp. 1183-1188, 1986

Online since:

January 1986

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$35.00

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