Paper Titles

Interaction of Point Defects with Implanted Hydrogen in Undoped Germanium
p.1171

Evolution of Defect Structures around Te Implanted in GaAs during Solid Phase Epitaxial Regrowth
p.1177

As-Implanted Lattice Sites of Dopants in Semiconductors
p.1183

Defect Structures in Ion-Implanted InSb
p.1189

Defects and Optically Active Transition and Rare Earth Elements in III-V and II-VI Semiconductors and Diamond
p.1195

Zn-Impurity-Induced Structual Disorder in AlGaAs Alloy
p.1201

Study of Deep Levels in Al_yGa_xIn_1-x-y P Material Grown by Movpe
p.1207

Effects of Annealing on Electron Trap and Free Carrier Concentration in n-Type GaAs
p.1213

Donor Identification in Bulk Gallium Arsenide
p.1219

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Defects and Optically Active Transition and Rare...

Defects and Optically Active Transition and Rare Earth Elements in III-V and II-VI Semiconductors and Diamond

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

1195-1200

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.1195

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Online since:

January 1986

Authors:

A.A. Gippius, V. Vavilov, V.V. Ushakov, V.M. Konnov, N.A. Rzakuliev, S.A. Kazarian, A.A. Shirokov, V.N. Jakimkin

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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