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Donor Identification in Bulk Gallium Arsenide
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Observation of Stoichiometry Changes Beneath Metal Contacts on GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Effects of Annealing on Electron Trap and Free...

Effects of Annealing on Electron Trap and Free Carrier Concentration in n-Type GaAs

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

1213-1218

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.1213

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Online since:

January 1986

Authors:

C. Ghezzi, E. Gombia, L. Vanzetti

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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