Effects of Annealing on Electron Trap and Free Carrier Concentration in n-Type GaAs

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

1213-1218

Citation:

C. Ghezzi et al., "Effects of Annealing on Electron Trap and Free Carrier Concentration in n-Type GaAs", Materials Science Forum, Vols. 10-12, pp. 1213-1218, 1986

Online since:

January 1986

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