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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Photoluminescence Studies near Residual...

Photoluminescence Studies near Residual Dislocations in In-Alloyed GaAs

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

1229-1234

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.1229

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Online since:

January 1986

Authors:

P. Bunod, E. Molva, A. Chabli, F. Bertin, J. Blétry, Le Si Dang

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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