Paper Titles

Donor Identification in Bulk Gallium Arsenide
p.1219

Observation of Stoichiometry Changes Beneath Metal Contacts on GaAs
p.1223

Photoluminescence Studies near Residual Dislocations in In-Alloyed GaAs
p.1229

Spatial Distribution of Point Defects and Complexes in Semi-Insulating LEC and Si-Doped GF Grown GaAs Crystals
p.1235

Detection of Non Stoichiometric Vacancy Defects in CdTe, HgTe and Hg_1-x Cd_xTe by Positron Annihilation
p.1241

Native Defects in β-Sic
p.1247

Photoluminescence of Defects Produced by Reactive Ion Etching of Silicon
p.1253

Semi-Insulating Behavior in Undoped LEC InP after Annealing in Phosphorous
p.1259

Radiative Recombination Mechanism of Deep Levels in GaAs
p.1265

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Photoluminescence of Defects Produced by Reactive...

Photoluminescence of Defects Produced by Reactive Ion Etching of Silicon

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

1253-1258

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.1253

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Online since:

January 1986

Authors:

G.A. Northrop, G.S. Oehrlein

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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