Paper Titles

Defects and Optically Active Transition and Rare Earth Elements in III-V and II-VI Semiconductors and Diamond
p.1195

Zn-Impurity-Induced Structual Disorder in AlGaAs Alloy
p.1201

Study of Deep Levels in Al_yGa_xIn_1-x-y P Material Grown by Movpe
p.1207

Effects of Annealing on Electron Trap and Free Carrier Concentration in n-Type GaAs
p.1213

Donor Identification in Bulk Gallium Arsenide
p.1219

Observation of Stoichiometry Changes Beneath Metal Contacts on GaAs
p.1223

Photoluminescence Studies near Residual Dislocations in In-Alloyed GaAs
p.1229

Spatial Distribution of Point Defects and Complexes in Semi-Insulating LEC and Si-Doped GF Grown GaAs Crystals
p.1235

Detection of Non Stoichiometric Vacancy Defects in CdTe, HgTe and Hg_1-x Cd_xTe by Positron Annihilation
p.1241

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Donor Identification in Bulk Gallium Arsenide

Donor Identification in Bulk Gallium Arsenide

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 14

Info:

Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

1219-1222

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.1219

Citation:

Cite this paper

Online since:

January 1986

Authors:

T.D. Harris, M.S. Skolnick

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1986 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: