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Spatial Distribution of Point Defects and Complexes in Semi-Insulating LEC and Si-Doped GF Grown GaAs Crystals
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Detection of Non Stoichiometric Vacancy Defects in CdTe, HgTe and Hg_1-x Cd_xTe by Positron Annihilation
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Native Defects in β-Sic
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Photoluminescence of Defects Produced by Reactive Ion Etching of Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Semi-Insulating Behavior in Undoped LEC InP after...

Semi-Insulating Behavior in Undoped LEC InP after Annealing in Phosphorous

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

1259-1264

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.1259

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Online since:

January 1986

Authors:

Paul B. Klein, R.L. Henry, T.A. Kennedy, N.D. Wilsey

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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