Paper Titles

Defects Related to Nitrogen Implantation in Silicon Single Crystals
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Precipitate Morphologies in Oxygen - Ion Implanted Silicon: A High Resolution Electron Microscopy Study
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Dose Dependence of Defects in Silicon Produced by High Dose, High Temperature O⁺ Implantation
p.1159

Investigation of the Lattice Defects in P Ion Implanted Silicon
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Interaction of Point Defects with Implanted Hydrogen in Undoped Germanium
p.1171

Evolution of Defect Structures around Te Implanted in GaAs during Solid Phase Epitaxial Regrowth
p.1177

As-Implanted Lattice Sites of Dopants in Semiconductors
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Defect Structures in Ion-Implanted InSb
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Defects and Optically Active Transition and Rare Earth Elements in III-V and II-VI Semiconductors and Diamond
p.1195

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Interaction of Point Defects with Implanted...

Interaction of Point Defects with Implanted Hydrogen in Undoped Germanium

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

1171-1176

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.1171

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Online since:

January 1986

Authors:

Kazuyoshi Ito, Ichiro Baba, Kaoru Mizuno, Takashi Ito

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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