Paper Titles

Beam-Induced Annealing of Defects Created by Imlantation at 30 K in Si
p.1129

Annealing Behaviour of High Concentration of Sn and Sb Implanted in Silicon
p.1135

Structural Defects in Ion-Implanted Silicon Observed by Perturbed Angular Correlation
p.1141

Defects Related to Nitrogen Implantation in Silicon Single Crystals
p.1147

Precipitate Morphologies in Oxygen - Ion Implanted Silicon: A High Resolution Electron Microscopy Study
p.1153

Dose Dependence of Defects in Silicon Produced by High Dose, High Temperature O⁺ Implantation
p.1159

Investigation of the Lattice Defects in P Ion Implanted Silicon
p.1165

Interaction of Point Defects with Implanted Hydrogen in Undoped Germanium
p.1171

Evolution of Defect Structures around Te Implanted in GaAs during Solid Phase Epitaxial Regrowth
p.1177

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Precipitate Morphologies in Oxygen - Ion Implanted...

Precipitate Morphologies in Oxygen - Ion Implanted Silicon: A High Resolution Electron Microscopy Study

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

1153-1158

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.1153

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Online since:

January 1986

Authors:

G. Vanderschaeve, R.W. Carpenter, J.C. Barry, C.J. Varker, S.R. Wilson

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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