Paper Titles

Experimental Study of Divacancy in Silicon
p.1105

New Impurity-Defect Reactions in Silicon
p.1111

Photoluminescence Study of Fe²⁺ in InP_1-xAs_x:Fe Alloys
p.1117

Electron Microscopy Data for Threshold Energy of Point Defect Creation in Silicon
p.1123

Beam-Induced Annealing of Defects Created by Imlantation at 30 K in Si
p.1129

Annealing Behaviour of High Concentration of Sn and Sb Implanted in Silicon
p.1135

Structural Defects in Ion-Implanted Silicon Observed by Perturbed Angular Correlation
p.1141

Defects Related to Nitrogen Implantation in Silicon Single Crystals
p.1147

Precipitate Morphologies in Oxygen - Ion Implanted Silicon: A High Resolution Electron Microscopy Study
p.1153

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Beam-Induced Annealing of Defects Created by...

Beam-Induced Annealing of Defects Created by Imlantation at 30 K in Si

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 14

Info:

Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

1129-1134

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.1129

Citation:

Cite this paper

Online since:

January 1986

Authors:

Brian Bech Nielsen, J.U. Andersen

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1986 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: