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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12

Materials Science Forum Vols. 10-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12

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Paper Title Page

Evolution of Defect Structures around Te Implanted in GaAs during Solid Phase Epitaxial Regrowth

Authors: D. Schroyen, P. Hendrickx, G. Langouche

1177

As-Implanted Lattice Sites of Dopants in Semiconductors

Authors: H. Hofsäss, G. Lindner, S. Winter, B. Besold, E. Recknagel, G. Weyer, J.W. Petersen

1183

Defect Structures in Ion-Implanted InSb

Authors: G. Weyer, H. Grann, F.T. Pedersen

1189

Defects and Optically Active Transition and Rare Earth Elements in III-V and II-VI Semiconductors and Diamond

Authors: A.A. Gippius, V. Vavilov, V.V. Ushakov, V.M. Konnov, N.A. Rzakuliev, S.A. Kazarian, A.A. Shirokov, V.N. Jakimkin

1195

Zn-Impurity-Induced Structual Disorder in AlGaAs Alloy

Authors: T. Kamijoh, A. Hashimoto, N. Watanabe, M. Sakuta

1201

Study of Deep Levels in Al_yGa_xIn_1-x-y P Material Grown by Movpe

Authors: E. Dupont-Nivet, J.N. Patillon, J.P. Andre, G.M. Martin

1207

Effects of Annealing on Electron Trap and Free Carrier Concentration in n-Type GaAs

Authors: C. Ghezzi, E. Gombia, L. Vanzetti

1213

Donor Identification in Bulk Gallium Arsenide

Authors: T.D. Harris, M.S. Skolnick

1219

Observation of Stoichiometry Changes Beneath Metal Contacts on GaAs

Authors: Zuzanna Liliental-Weber, Eicke R. Weber, N. Newman, W.E. Spicer, R. Gronsky, J. Washburn

1223

Photoluminescence Studies near Residual Dislocations in In-Alloyed GaAs

Authors: P. Bunod, E. Molva, A. Chabli, F. Bertin, J. Blétry, Le Si Dang

1229

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