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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12

Materials Science Forum Vols. 10-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12

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Table of Contents

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Paper Title Page

Germanium Impurity Diffusion in Boron Doped Silicon

Authors: A.L. Bouchetout, Nouar Tabet, Claude J.A. Monty

127

Diffusion of Tellurium in Silicon

Authors: Nicolaas Stolwijk, F. Rollert, D. Grünebaum, Helmut Mehrer, G. Weyer

133

Behaviour of Substitutional Gold in Silicon

Authors: Masayuki Yoshida, Masami Morooka, H. Tomokage

139

Nature and Generation Mechanism of Butterfly-Type Intrinsic Gettering Centers in Oxygen-Free Silicon Crystals

Authors: O. Ueda, K. Nauka, J. Lagowski, H.C. Gatos

145

Distribution of Cobalt in Silicon after Phosphorous Diffusion Gettering

Authors: R. Kühnapfel, Wolfgang Schröter, D. Gilles

151

Transient Defects Kinetics during Silicon Oxidation and Diffusion Phenomena

Authors: D. Mathiot

157

Migration of Interstitial Boron in Silicon

Authors: R.D. Harris, G.D. Watkins, Lionel C. Kimerling

163

Solubility, Diffusion and Ion-Pairing of Cobalt in Extrinsic Silicon at 700°C

Authors: D. Gilles, Wolfgang Schröter

169

Diffusion and Conductivity of Potassium Impurity in Silicon and Germanium

Authors: L.T. Ho

175

An Overview of Electron Paramagnetic Resonance Studies of Si-SiO₂ Interface States

Authors: K.L. Brower

181

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