Paper Titles

Behaviour of Substitutional Gold in Silicon
p.139

Nature and Generation Mechanism of Butterfly-Type Intrinsic Gettering Centers in Oxygen-Free Silicon Crystals
p.145

Distribution of Cobalt in Silicon after Phosphorous Diffusion Gettering
p.151

Transient Defects Kinetics during Silicon Oxidation and Diffusion Phenomena
p.157

Migration of Interstitial Boron in Silicon
p.163

Solubility, Diffusion and Ion-Pairing of Cobalt in Extrinsic Silicon at 700°C
p.169

Diffusion and Conductivity of Potassium Impurity in Silicon and Germanium
p.175

An Overview of Electron Paramagnetic Resonance Studies of Si-SiO₂ Interface States
p.181

Manganese Luminescence in GaAs/GaAlAs Superlattices
p.189

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Migration of Interstitial Boron in Silicon

Migration of Interstitial Boron in Silicon

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

163-168

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.163

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Online since:

January 1986

Authors:

R.D. Harris, G.D. Watkins, Lionel C. Kimerling

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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