Paper Titles

Theoretical Determination of the Vacancy Migration Energy in Silicon
p.115

Diffusion without Vacancies or Interstitials: A New Concerted Exchange Mechanism
p.121

Germanium Impurity Diffusion in Boron Doped Silicon
p.127

Diffusion of Tellurium in Silicon
p.133

Behaviour of Substitutional Gold in Silicon
p.139

Nature and Generation Mechanism of Butterfly-Type Intrinsic Gettering Centers in Oxygen-Free Silicon Crystals
p.145

Distribution of Cobalt in Silicon after Phosphorous Diffusion Gettering
p.151

Transient Defects Kinetics during Silicon Oxidation and Diffusion Phenomena
p.157

Migration of Interstitial Boron in Silicon
p.163

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Behaviour of Substitutional Gold in Silicon

Behaviour of Substitutional Gold in Silicon

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

139-144

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.139

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Online since:

January 1986

Authors:

Masayuki Yoshida, Masami Morooka, H. Tomokage

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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