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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Theoretical Determination of the Vacancy Migration...

Theoretical Determination of the Vacancy Migration Energy in Silicon

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

115-120

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.115

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Online since:

January 1986

Authors:

P.J. Kelly, Roberto Car, Sokrates T. Pantelides

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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