Calculation of the Spin-Polarized Electronic Structure of Si: Feoi in Super-Cell Full-Potential Linearized Augumented Plane Wave Method
p.61
p.61
Tight Binding Calculations of Optical Cross Sections for Deep Level Defects in Semiconductors
p.67
p.67
Accurate Prediction of Lattice Distortion for Complex Defects in Semiconductors: Extended Interstitials as Tests of Valence Force Potentials
p.73
p.73
Effects of Doping and Alloying on Native Defects and Complex Formation in Hg1-x CdxTe
p.79
p.79
The Electronic States of a Substitutional Ytterbium Impurity in Indium Phosphide
p.85
p.85
Defect Calculations in a Modified Haldane-Anderson Model
p.91
p.91
Electronic Structure of Neutral Complex Defects in Silicon
p.97
p.97
High Temperature Investigations of Silicon by Means of Positron Annihilation
p.103
p.103
Theoretical Determination of the Vacancy Migration Energy in Silicon
p.115
p.115
The Electronic States of a Substitutional Ytterbium Impurity in Indium Phosphide
Abstract:
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Periodical:
Materials Science Forum (Volumes 10-12)
Pages:
85-90
Citation:
Online since:
January 1986
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© 1986 Trans Tech Publications Ltd. All Rights Reserved
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