Tight Binding Calculations of Optical Cross Sections for Deep Level Defects in Semiconductors

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

67-71

DOI:

10.4028/www.scientific.net/MSF.10-12.67

Citation:

J. Petit et al., "Tight Binding Calculations of Optical Cross Sections for Deep Level Defects in Semiconductors", Materials Science Forum, Vols. 10-12, pp. 67-71, 1986

Online since:

January 1986

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$35.00

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