Paper Titles

High Temperature Investigations of Silicon by Means of Positron Annihilation
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Theoretical Determination of the Vacancy Migration Energy in Silicon
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Diffusion without Vacancies or Interstitials: A New Concerted Exchange Mechanism
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Germanium Impurity Diffusion in Boron Doped Silicon
p.127

Diffusion of Tellurium in Silicon
p.133

Behaviour of Substitutional Gold in Silicon
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Nature and Generation Mechanism of Butterfly-Type Intrinsic Gettering Centers in Oxygen-Free Silicon Crystals
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Distribution of Cobalt in Silicon after Phosphorous Diffusion Gettering
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Transient Defects Kinetics during Silicon Oxidation and Diffusion Phenomena
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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Diffusion of Tellurium in Silicon

Diffusion of Tellurium in Silicon

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

133-138

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.133

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Online since:

January 1986

Authors:

Nicolaas Stolwijk, F. Rollert, D. Grünebaum, Helmut Mehrer, G. Weyer

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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