Paper Titles

Diffusion without Vacancies or Interstitials: A New Concerted Exchange Mechanism
p.121

Germanium Impurity Diffusion in Boron Doped Silicon
p.127

Diffusion of Tellurium in Silicon
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Behaviour of Substitutional Gold in Silicon
p.139

Nature and Generation Mechanism of Butterfly-Type Intrinsic Gettering Centers in Oxygen-Free Silicon Crystals
p.145

Distribution of Cobalt in Silicon after Phosphorous Diffusion Gettering
p.151

Transient Defects Kinetics during Silicon Oxidation and Diffusion Phenomena
p.157

Migration of Interstitial Boron in Silicon
p.163

Solubility, Diffusion and Ion-Pairing of Cobalt in Extrinsic Silicon at 700°C
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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Nature and Generation Mechanism of Butterfly-Type...

Nature and Generation Mechanism of Butterfly-Type Intrinsic Gettering Centers in Oxygen-Free Silicon Crystals

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

145-150

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.145

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Online since:

January 1986

Authors:

O. Ueda, K. Nauka, J. Lagowski, H.C. Gatos

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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