Paper Titles

Nature and Generation Mechanism of Butterfly-Type Intrinsic Gettering Centers in Oxygen-Free Silicon Crystals
p.145

Distribution of Cobalt in Silicon after Phosphorous Diffusion Gettering
p.151

Transient Defects Kinetics during Silicon Oxidation and Diffusion Phenomena
p.157

Migration of Interstitial Boron in Silicon
p.163

Solubility, Diffusion and Ion-Pairing of Cobalt in Extrinsic Silicon at 700°C
p.169

Diffusion and Conductivity of Potassium Impurity in Silicon and Germanium
p.175

An Overview of Electron Paramagnetic Resonance Studies of Si-SiO₂ Interface States
p.181

Manganese Luminescence in GaAs/GaAlAs Superlattices
p.189

Capacitance and Current Spectroscopy of Perpendicular Transport in Compensated GaAs-GaAlAs Superlattices
p.193

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Solubility, Diffusion and Ion-Pairing of Cobalt in...

Solubility, Diffusion and Ion-Pairing of Cobalt in Extrinsic Silicon at 700°C

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

169-174

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.169

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Online since:

January 1986

Authors:

D. Gilles, Wolfgang Schröter

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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