Performance of Photoelectrochemical Sensors Based on Doped QDs under Various Bias Voltage

Li Ping Tu; Xiang Yu; Guo Wei Xu

doi:10.4028/www.scientific.net/MSF.1001.175

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HomeMaterials Science ForumMaterials Science Forum Vol. 1001Performance of Photoelectrochemical Sensors Based...

Performance of Photoelectrochemical Sensors Based on Doped QDs under Various Bias Voltage

Abstract:

In this paper, a novel photoelectrochemical sensor based on doped quantum dots (QDs) under various bias voltages was designed, first, photoelectrochemical sensors were designed for detection of chemical solution concentration. Second, the fabrication processes of doped QDs based sensors were described, third, doped QDs based sensors were tested under different applied potentials and light sources to show different measurement characteristics. From the experimental results, it can be concluded that the doped QDs based sensors designed under-300mV applied potential and 365nm light source show the best performance.

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Periodical:

Materials Science Forum (Volume 1001)

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175-180

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https://doi.org/10.4028/www.scientific.net/MSF.1001.175

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Online since:

July 2020

Authors:

Li Ping Tu*, Xiang Yu, Guo Wei Xu

Keywords:

Bias Voltages, Doped Quantum Dots, Photocurrent, Photoelectrochemical Sensors

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