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HomeMaterials Science ForumMaterials Science Forum Vol. 1002Photo Voltaic Properties of Ag2O/ Si...

Photo Voltaic Properties of Ag₂O/ Si Heterojunction Device: Effect of Substrate Conductivity

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Abstract:

The chemical bath deposition method was employed to prepare Ag₂O films at specific preparation conditions. Silicon substrate with different conductivity was used to study their effect on the electrical and photovoltaic properties of the prepared devices. The current-voltage properties reveal that the ideality factor was (2.4 and 3.36) for psi and n-si substrate respectively. The obtained device efficiency is 0.35 while maximum detectivity was 0.3 cm.Hz^1/2W^-1.

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Materials Science Forum (Volume 1002)

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200-210

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https://doi.org/10.4028/www.scientific.net/MSF.1002.200

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Online since:

July 2020

Authors:

Muntadher Talib Awayiz, Evan T. Salim*

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Chemical Bath Deposition, Different Conductivity, Silicon Substrate, Silver Oxide

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