Research on VRM in RF PA System Based on Enhancement Mode GaN HEMT

Abstract:

As a key part of the RF PA system, VRM (Voltage-Regulate-Modulator), whose main role is to offer pulse voltage for RF power transistor, is often slighted. As a result, VRM has been a restraining factor now. In order to realize the needs of high speed and high frequency, a new method based on enhancement mode GaN HEMT of designing VRM is proposed in this paper. By using this method, the rise time and fall time of VRM could be as about 10ns with the peak voltage 75V and the peak current 150A, which is quite suitable for driving high voltage and high power GaN-based RF power transistor.

• Periodical: Materials Science Forum (Volume 1014)
• Pages: 149-156
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1014.149
• Online since: November 2020
• Authors: Yu Jie Cheng*, Jian Hua Xu, Hai Feng Cheng
• Keywords: GaN HEMT, High Frequency, High Speed, RF PA, VRM

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