Inserting a AlN Electron Blocking Layer for InGaN/GaN Blue Light-Emitting Diodes

Wan Sheng Zuo; Yin Xi Niu; Liu Yang; Xiu Zhen Chi; Jin Jin Liu; Xiao Hong Zhang

doi:10.4028/www.scientific.net/MSF.1014.126

Paper Titles

The Effect on the Interface and Reliability of SiC MOS by Ar/O₂ Annealing
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A Study of the High-K Enhanced Depletion-JTE for Ultra-High Voltage SiC Power Device with Improved JTE-Dose Window
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Design, Fabrication and Characterization of 10kV/100A 4H-SiC PiN Power Rectifier
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Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes
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Inserting a AlN Electron Blocking Layer for InGaN/GaN Blue Light-Emitting Diodes
p.126

Broadband Ultraviolet Photodetector Based on Graphene/β-Ga₂O₃/GaN Heterojunction
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Enhancement of Minority Carrier Lifetime in Ultra-High Voltage 4H-SiC PiN Diodes by Carbon-Film Annealing
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Effect of the Field Oxidation Process on the Electrical Characteristics of 6500V 4H-SiC JBS Diodes
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Research on VRM in RF PA System Based on Enhancement Mode GaN HEMT
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HomeMaterials Science ForumMaterials Science Forum Vol. 1014Inserting a AlN Electron Blocking Layer for...

Inserting a AlN Electron Blocking Layer for InGaN/GaN Blue Light-Emitting Diodes

Abstract:

In this study, the advantages of the AlN electron blocking layer (EBL) for InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The LEDs with the AlN EBL exhibited better optical performance over a wide range of carrier concentration due to the suppression of electron overflow. Furthermore, the AlN EBL with a thicker last barrier layer was investigated. The thicker last barrier layer was used to enhance Electrostatic Discharge (ESD) characteristic by the better current spreading effect.

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Periodical:

Materials Science Forum (Volume 1014)

Pages:

126-130

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1014.126

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Online since:

November 2020

Authors:

Wan Sheng Zuo, Yin Xi Niu*, Liu Yang, Xiu Zhen Chi, Jin Jin Liu, Xiao Hong Zhang

Keywords:

AlN, Electron Leakage, ESD, Luminous Efficiency

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