Broadband Ultraviolet Photodetector Based on Graphene/β-Ga₂O₃/GaN Heterojunction

Abstract:

Broadband ultraviolet (BUV) photodetectors are widely used in military and civil fields. A high performance BUV photodetector based on graphene/β-Ga₂O₃/GaN heterojunction is proposed and realized by semiconductor micro-fabrication techniques in this paper. The β-Ga₂O₃ and GaN films are grown by metal organic chemical vapor deposition (MOCVD), and the graphene is also used as a transparent electrode. The device exhibits a broad response band from 230 nm to 368 nm with responsivity exceeding 0.4A/W at -5 V bias voltage and a peak responsivity of 0.53 A/W at 256 nm. These performances can be attributed to the internal gain mechanism of graphene/β-Ga₂O₃/GaN heterojunction and the optical properties of graphene. Our work provides an efficient method to realize a high-performance BUV photodetector for photoelectric applications.

• Periodical: Materials Science Forum (Volume 1014)
• Pages: 131-136
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1014.131
• Online since: November 2020
• Authors: Chun Hong Zeng, Yong Jian Ma, Bao Shun Zhang, Ya Meng Xu, Mei Kong*
• Keywords: BUV Photodetector, Graphene, Heterojunction, β-Ga₂O₃/ GaN

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