A Study of the High-K Enhanced Depletion-JTE for Ultra-High Voltage SiC Power Device with Improved JTE-Dose Window

Yi Wen; Xiao Jie Xu; Meng Ling Tao; Xiao Chuan Deng; Xuan Li; Zhi Qiang Li; Bo Zhang

doi:10.4028/www.scientific.net/MSF.1014.109

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HomeMaterials Science ForumMaterials Science Forum Vol. 1014A Study of the High-K Enhanced Depletion-JTE for...

A Study of the High-K Enhanced Depletion-JTE for Ultra-High Voltage SiC Power Device with Improved JTE-Dose Window

Abstract:

In this paper, a High-K dielectric permittivity Enhanced Depletion-JTE(HKED-JTE) for 10 kV ultra-high voltage is studied. The HKED-JTE improves the terminal protection efficiency by the self-charge balance of High-K dielectric polarization charges. The tolerance of the implantation dose window of HKED-JTE reaches 9 times as large as that of normal TZ-JTE with the same terminal area, and the corresponding BV holding theoretical breakdown voltage is over 80%. The thicker High-K layer accomplishes the modulation of the surface electric flux and decreases the electric field up to 51% and 47% at the abrupt junction J2 and J3 along the device interface between the SiC and High-K materials.

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Periodical:

Materials Science Forum (Volume 1014)

Pages:

109-114

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1014.109

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Online since:

November 2020

Authors:

Yi Wen*, Xiao Jie Xu, Meng Ling Tao, Xiao Chuan Deng, Xuan Li, Zhi Qiang Li, Bo Zhang

Keywords:

4H-SiC, High-K, JTE-Dose Window, Ultra-High Voltage

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