FEM Simulation on Diffusion Bonding of High Purity Tungsten Target

Qian Jia; Zhao Chong Ding; Yu Qi; Han Zu Li; Yong Jun Li; Hai Tao Teng

doi:10.4028/www.scientific.net/MSF.1035.787

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HomeMaterials Science ForumMaterials Science Forum Vol. 1035FEM Simulation on Diffusion Bonding of High Purity...

FEM Simulation on Diffusion Bonding of High Purity Tungsten Target

Abstract:

The FEM (finite element method) simulation was used to study the diffusion bonding deformation of high purity tungsten target. The influence of different welding structure, bonding temperature on the deformation of the final high-purity tungsten target was systematically studied. Meanwhile, some microscopic properties of tungsten target were developed, such as internal stress size and distributions, strain size and distributions. Finally, physical experiments are used to verify numerical simulation results. The results show that the method of adding an intermediate layer can release the residual stress between the high-purity target and back plate. The bonding stress of high-purity tungsten target is mainly concentrated with the tungsten target and the intermediate layer in between, which is easy to fail during the later leveling process. Small deformation of bonding tungsten target can be obtained by low diffusion bonding temperature.

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Periodical:

Materials Science Forum (Volume 1035)

Pages:

787-791

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1035.787

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Online since:

June 2021

Authors:

Qian Jia*, Zhao Chong Ding, Yu Qi, Han Zu Li, Yong Jun Li, Hai Tao Teng

Keywords:

Diffusion Bonding, FEM Simulation, Residual Stress, Tungsten Target

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