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Point Defects in Neutron Transmutation Doped CZ Silicon
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The Effect of Point Defects Introduced by Proton Irradiation on Positron Annihilation in Si
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Vaeancy Type Defects after Post-Growth Quenching and Re-Annealing of Si GaAs
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The EL2 Defect and Vacancy in GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110The Effect of Point Defects Introduced by Proton...

The Effect of Point Defects Introduced by Proton Irradiation on Positron Annihilation in Si

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

925-928

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.925

Citation:

Cite this paper

Online since:

January 1992

Authors:

Yang Koo Cho, H. Kondo, T. Kubota, H. Nakashima, T. Kawano, Akira Uedono, Toshikazu Kurihara, Shoichiro Tanigawa

Keywords:

Jones Zone, Momentum Density, Positron Annihilation, Proton-Irradiation, Reconstruction, Vacancy

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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