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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110Vaeancy Type Defects after Post-Growth Quenching...

Vaeancy Type Defects after Post-Growth Quenching and Re-Annealing of Si GaAs

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

929-932

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.929

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Online since:

January 1992

Authors:

J.M. Clayton, H.M. Fretwell, S.G. Usmar, A. Alam, D.T.J. Hurle

Keywords:

EL2, Gallium Arsenide

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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