Vaeancy Type Defects after Post-Growth Quenching and Re-Annealing of Si GaAs

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Periodical:

Materials Science Forum (Volumes 105-110)

Edited by:

Zs. Kajcsos and Cs. Szeles

Pages:

929-932

DOI:

10.4028/www.scientific.net/MSF.105-110.929

Citation:

J.M. Clayton et al., "Vaeancy Type Defects after Post-Growth Quenching and Re-Annealing of Si GaAs", Materials Science Forum, Vols. 105-110, pp. 929-932, 1992

Online since:

January 1992

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