Comparative Parametric Analysis of Class-B Power Amplifier Using BJT, Single-Gate MOSFET, and Double-Gate MOSFET

Abstract:

This paper presents system performance indices for a class-B power amplifier using Double-Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It also presents a comparative analysis of three power amplifiers using different switching devices, i.e. Bipolar Junction Transistor (BJT), MOSFET, and DG MOSFET. The MOSFET used in this research work is based on Silicon for n-MOSFET and SiO₂ has been used as oxide layer. These power amplifiers are also being designed and simulated to test the speed and time (taken for each of these power amplifiers) to get the output signal when an input signal is applied. A comparison of these three power amplifier circuits is taken in the tabular form to conclude which power amplifier circuit performs better regarding its switching speed and the time. Switching speed relates with the time taken to amplify the signal, which is the same as its time to amplify the signal to a specific gain. Settling time for these three types of power amplifiers have also been tested and presented for the performance of these power amplifiers.

• Periodical: Materials Science Forum (Volume 1053)
• Pages: 137-142
• DOI: https://doi.org/10.4028/p-57edxh
• Online since: February 2022
• Authors: Sandile H. Mbonane*, Viranjay M. Srivastava
• Keywords: Dielectric Materials, Double-Gate (DG) MOSFET, Electronic Materials, Microelectronics, Nanotechnology, Semiconductor, Silicon, VLSI

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