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HomeMaterials Science ForumMaterials Science Forum Vol. 1112Photoluminescence of Erbium-Doped ZnO...

Photoluminescence of Erbium-Doped ZnO Nanostructures

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Abstract:

The present work reviews the results of the photoluminescence study of erbium-doped ZnO nanostructures synthesized by physical and chemical methods. ZnO is a semiconductor compound composed of zinc and oxygen atoms. It possesses a wide bandgap (3.37 eV) and is optically and electrically active. When ZnO is synthesized in the form of nanostructures, such as nanoparticles, nanowires, nanorods, nanotubes, or nanosheets, it exhibits enhanced properties compared to its bulk counterpart due to quantum confinement effects and a high surface-to-volume ratio. By controlling different parameters in the growth processes of erbium-doped ZnO nanostructures, materials can be synthesized for different applications such as sensors, optoelectronics, and energy harvesting.

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Periodical:

Materials Science Forum (Volume 1112)

Pages:

139-144

DOI:

https://doi.org/10.4028/p-gW795b

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Online since:

February 2024

Authors:

Erasto Vergara Hernández*, César Eduardo Cea Montufar, Miguel Angel Cerro Ramírez, Fabián Mendoza Hernández

Keywords:

Er, Nanostructures, Photoluminescence, ZnO

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© 2024 Trans Tech Publications Ltd. All Rights Reserved

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