Influence of Oxygen-Argon Ratio on ZrO2 Thin Films Deposited on Transparent Conductive ITO Substrates

Rui Heng Xiao; Wen Rui Sun; Neng Gan; Zhi Feng Liu; Zheng Fu Tong

doi:10.4028/p-eBmBz2

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HomeMaterials Science ForumMaterials Science Forum Vol. 1151Influence of Oxygen-Argon Ratio on ZrO2 Thin Films...

Influence of Oxygen-Argon Ratio on ZrO₂ Thin Films Deposited on Transparent Conductive ITO Substrates

Abstract:

This study investigated the correlation between the oxygen-argon ratio and crystal phase, the surface flatness and electrical properties of ZrO₂ thin films The films were deposited on transparent conductive indium tin oxide (ITO) substrates by DC magnetron sputtering. ZrO₂ films exhibit ZrO cubic and ZrO₂ monoclinic mixed phases when deposited with a low oxygen-argon ratio of 5:45. As the oxygen-argon ratio increases, a gradual phase transition ZrO to orthorhombic ZrO₂ occurs. Besides, the ZrO₂ film deposited with an oxygen-argon ratio of 10:40 exhibits highest resistance to electric field strength, and lowest leakage current.

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Periodical:

Materials Science Forum (Volume 1151)

Pages:

69-73

DOI:

https://doi.org/10.4028/p-eBmBz2

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Online since:

June 2025

Authors:

Rui Heng Xiao, Wen Rui Sun, Neng Gan, Zhi Feng Liu, Zheng Fu Tong*

Keywords:

DC Magnetron Sputtering, ITO Substrate, The Process of Deposition, ZrO₂ Thin Films

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References

[1] Yu T, Wu X, Zhuge L. 2010 Current status and prospects of high K grid dielectric materials.Mater. Herald 24: 25–29

Google Scholar

[2] Gusev EP, Copel M, Cartier E, Baumvol IJR, Krug C, Gribelyuk MA. 2000 High-resolution depth profiling in ultrathin Al₂O₃ films on Si. Appl. Phys. Lett. 76: 176–178

DOI: 10.1063/1.125694

Google Scholar

[3] Geretovszky Z, Szörenyi T, Stoquert J-P, Boydijtsf. 2004 Correlation of compositional and structural changes during pulsed laser deposition of tantalum oxide films. Thin Solid Films 453: 245–250

DOI: 10.1016/j.tsf.2003.11.129

Google Scholar

[4] Wang G, Moses D, Heeger AJ, Zhang H-M, Narasimhan M, Demaray RJ. 2004 Poly(3-hexylthiophene) field-effect transistors with high dielectric constant gate insulator. J. Appl. Phys. 95: 316–322

DOI: 10.1063/1.1630693

Google Scholar

[5] Na S-Y, Kim Y-M, Yoon D-J, Yoon SM. 2017 Improvement in negative bias illumination stress stability of In–Ga–Zn–O thin film transistors using HfO₂ gate insulators by controlling atomic-layer-deposition conditions. J. Phys. D: Appl. Phys. 50: 495109

DOI: 10.1088/1361-6463/aa9489

Google Scholar

[6] Choi W-H, Sheng J, Jeong H-J, Park J-S, Kim M, Jeon W. 2019 Improved performance and stability of In-Sn-Zn-O thin film transistor by introducing a meso-crystalline ZrO₂ high-k gate insulator. J. Vac. Sci. Technol. A 37

DOI: 10.1116/1.5079834

Google Scholar

[7] Fischer D, Kersch A. 2008 The effect of dopants on the dielectric constant of HfO₂ and ZrO₂ from first principles. Appl. Phys. Lett.92:

Google Scholar

[8] Lee JS, Chang S, Koo S-M, Lee SY. 2010 High-performance a-IGZO TFT with ZrO₂ gate dielectric fabricated at room temperature. IEEE Electron Device Lett. 31: 225–227

DOI: 10.1109/led.2009.2038806

Google Scholar

[9] Cassir M, Goubin F, Bernay C, Vernoux P, Lincot D. 2002 Synthesis of ZrO₂ thin films by atomic layer deposition: Growth kinetics, structural and electrical properties. Appl. Surf. Sci. 193: 120–128

DOI: 10.1016/s0169-4332(02)00247-7

Google Scholar