Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine

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Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

315-320

DOI:

10.4028/www.scientific.net/MSF.117-118.315

Citation:

S. F. Chichibu et al., "Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine ", Materials Science Forum, Vols. 117-118, pp. 315-320, 1993

Online since:

January 1993

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