Paper Titles

Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy
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Partial Ferromagnetic Order in p-Type (In, Mn) as Diluted Magnetic III-V Semiconductors
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Yb Intra-4f-Shell Luminescence in Yb- and Zn-Doped InP
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Infrared Absorption Lines in Hydrogen-Plasma Treated Se-Doped GaAs
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Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine
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Anti-Stokes Photoluminescence Related to the Deep Donor States in Si Double δ-Doped Al_xGa_1-xAs
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Shallow Donor Bound State in an AlAs/GaAs Quantum Well with - X Mixing
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Optical Studies of Excitons in Be-Doped GaAs/AlGaAs Symmetric Coupled Double Quantum Wells
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Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells
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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Monoenergetic Positron Beam Study of Heavily...

Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

315-320

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.315

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Online since:

January 1993

Authors:

Shigefusa F. Chichibu, A. Iwai, Yuko Nakahara, S. Matsumoto, Hiroyuki Higuchi, Long Wei, Shoichiro Tanigawa

Keywords:

Ga Vacancy, Positron, tBAs

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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