Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy

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Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

291-296

DOI:

10.4028/www.scientific.net/MSF.117-118.291

Citation:

K. Ikuta et al., "Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy ", Materials Science Forum, Vols. 117-118, pp. 291-296, 1993

Online since:

January 1993

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