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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Impurities and Point Defects in GaAs and AlAs...

Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

291-296

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.291

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Online since:

January 1993

Authors:

K. Ikuta, Haruki Yokoyama, Naohisa Inoue

Keywords:

AlAs, ALE, Carbon, GaAs, Point Defect

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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