Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AIGaAs Quantum Wells

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Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

285-290

DOI:

10.4028/www.scientific.net/MSF.117-118.285

Citation:

C.I. Harris et al., "Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AIGaAs Quantum Wells ", Materials Science Forum, Vols. 117-118, pp. 285-290, 1993

Online since:

January 1993

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$35.00

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