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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Dispersion in Bound Exciton Binding Energy via...

Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AIGaAs Quantum Wells

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

285-290

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.285

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Online since:

January 1993

Authors:

C.I. Harris, Bo Monemar, P.O. Holtz, M. Sundaram, J.L. Merz, A.C. Gossard

Keywords:

Binding Energy, Exciton, Localization

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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