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Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine
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Anti-Stokes Photoluminescence Related to the Deep Donor States in Si Double δ-Doped Al_xGa_1-xAs
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Shallow Donor Bound State in an AlAs/GaAs Quantum Well with - X Mixing
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Optical Studies of Excitons in Be-Doped GaAs/AlGaAs Symmetric Coupled Double Quantum Wells
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Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells
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Multi-Level Dynamics between Below-Gap States in Heavily Doped Quantum Wells by Time-Resolved and Selectively-Excited Photoluminescence
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Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD
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Optical Absorption Lines in Heat-Treated GaAs
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Te-Related Donor States in Al_xGa_1-xAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Hydrogen Passivation of Shallow Impurities in...

Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

339-344

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.339

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Online since:

January 1993

Authors:

C.I. Harris, M. Stutzmann, K. Köhler

Keywords:

Localization, Passivation, Quantum Well

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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