Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD

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Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

351-356

DOI:

10.4028/www.scientific.net/MSF.117-118.351

Citation:

L. Lu et al., "Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD ", Materials Science Forum, Vols. 117-118, pp. 351-356, 1993

Online since:

January 1993

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$35.00

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