Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

351-356

Citation:

L. Lu et al., "Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD ", Materials Science Forum, Vols. 117-118, pp. 351-356, 1993

Online since:

January 1993

Export:

Price:

$38.00