Paper Titles

Shallow Donor Bound State in an AlAs/GaAs Quantum Well with - X Mixing
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Optical Studies of Excitons in Be-Doped GaAs/AlGaAs Symmetric Coupled Double Quantum Wells
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Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells
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Multi-Level Dynamics between Below-Gap States in Heavily Doped Quantum Wells by Time-Resolved and Selectively-Excited Photoluminescence
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Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD
p.351

Optical Absorption Lines in Heat-Treated GaAs
p.357

Te-Related Donor States in Al_xGa_1-xAs
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Shallow Donor States in InP - Electron-Spin-Resonance Induced Overhauser Shift -
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Donor Concentration Dependence of GaP Luminescence
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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Deep Electron Trap Studies of GaAlAs/GaAs Single...

Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

351-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.351

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Online since:

January 1993

Authors:

L. Lu, J. Zhou, W. Zhang, Masayoshi Umeno

Keywords:

DLTS, GaAlAs/GaAs QW, Laser, MOCVD

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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