Paper Titles

Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells
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Multi-Level Dynamics between Below-Gap States in Heavily Doped Quantum Wells by Time-Resolved and Selectively-Excited Photoluminescence
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Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD
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Optical Absorption Lines in Heat-Treated GaAs
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Te-Related Donor States in Al_xGa_1-xAs
p.363

Shallow Donor States in InP - Electron-Spin-Resonance Induced Overhauser Shift -
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Donor Concentration Dependence of GaP Luminescence
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Various Configurations of Silicon-Related Defects in GaAs
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Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations
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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Te-Related Donor States in AlxGa1-xAs

Te-Related Donor States in Al_xGa_1-xAs

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

363-368

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.363

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Online since:

January 1993

Authors:

J. G. Kang, Q. Huang, K. Hoshikawa, T. Fukuda

Keywords:

AlGaAs, Alloy, Te Donor

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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