Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations

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Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

387-392

DOI:

10.4028/www.scientific.net/MSF.117-118.387

Citation:

L. Pavesi et al., "Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations ", Materials Science Forum, Vols. 117-118, pp. 387-392, 1993

Online since:

January 1993

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