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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Si Doping of GaAs Grown by Molecular Beam Epitaxy...

Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

387-392

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.387

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Online since:

January 1993

Authors:

L. Pavesi, I. Harrison, F. Piazza, M. Henini

Keywords:

GaAs, Photoluminescence (PL), Si Doping

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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