The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam

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Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

411-416

DOI:

10.4028/www.scientific.net/MSF.117-118.411

Citation:

S. Fujii et al., "The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam ", Materials Science Forum, Vols. 117-118, pp. 411-416, 1993

Online since:

January 1993

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$35.00

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