The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

411-416

Citation:

S. Fujii et al., "The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam ", Materials Science Forum, Vols. 117-118, pp. 411-416, 1993

Online since:

January 1993

Export:

Price:

$38.00

Fetching data from Crossref.
This may take some time to load.