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Free-Carrier Saturation in III-V Compound Semiconductors
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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Effect of Hydrogen Passivation on Lightly n-Doped...

Effect of Hydrogen Passivation on Lightly n-Doped GaAs

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

429-434

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.429

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Online since:

January 1993

Authors:

Chao Jung Chen, Yu Huai Chang, T.C. Chen, S.H. Li, Yun Fa Chen, H.H. Lin

Keywords:

GaAs, Hall-Effect, Passivation

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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