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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118The Sn- and Si-DX Centre Properties in Double...

The Sn- and Si-DX Centre Properties in Double Doped (Al,Ga)As

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

441-446

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.441

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Online since:

January 1993

Authors:

D.K. Maude, U. Willke, M.L. Fille, Pierre Gibart, Jean Claude Portal

Keywords:

AlGaAs, DX Centre, Si-Doped, Sn-Doped

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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