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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Photoluminescence Study of Yb-Doped InP under Low...

Photoluminescence Study of Yb-Doped InP under Low Temperature and Pressure

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

465-470

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.465

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Online since:

January 1993

Authors:

K. Takarabe, S. Minomura, Akihito Taguchi, Kenichiro Takahei

Keywords:

InP:Yb, Luminescence, Pressure Effect

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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