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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Origin of Carrier Reduction by Annealing in n-Type...

Origin of Carrier Reduction by Annealing in n-Type ZnSe

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

483-488

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.483

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Online since:

January 1993

Authors:

T. Miyajima, Hideo Okuyama, Katsuhiro Akimoto, Long Wei, Shoichiro Tanigawa

Keywords:

Anneal, Carrier Reduction, Positron Annihilation Method

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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