Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positrons

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Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

501-506

DOI:

10.4028/www.scientific.net/MSF.117-118.501

Citation:

H. Itho et al., "Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positrons", Materials Science Forum, Vols. 117-118, pp. 501-506, 1993

Online since:

January 1993

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$35.00

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