Paper Titles

Far-Infrared Magneto-Absorption of Donors in the Epitaxial ZnSe Layers on GaAs
p.477

Origin of Carrier Reduction by Annealing in n-Type ZnSe
p.483

Photoluminescence Characterization of Defecfs in CuGaS₂ Crystals
p.489

Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC
p.495

Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positrons
p.501

Localized-Pair Recombination Nature of Visible Luminescence from Anodized Porous-Si
p.507

Visible Photoluminescence of Porous Silicon
p.513

Photoluminescence due to Zn-O Complexes in Silicon
p.519

High-Resolution EPR Spectroscopy of the Si-NL 10 Thermal Donor
p.521

HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Characterization of Defects in As-Grown and...

Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positrons

Article Preview

Abstract:

You might also be interested in these eBooks

Shallow Impurities in Semiconductors V

Info:

Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

501-506

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.501

Citation:

Cite this paper

Online since:

January 1993

Authors:

H. Itho, M. Yoshikawa, I. Nashiyama, Long Wei, Shoichiro Tanigawa, S. Misawa, H. Okumura, S. Yoshida

Keywords:

3C-SiC, Defect, Positron Annihilation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: