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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Hall Effect and Infrared Absorption Measurements...

Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

495-500

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.495

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Online since:

January 1993

Authors:

W. Götz, Adolf Schöner, Gerhard Pensl, W. Suttrop, Wolfgang J. Choyke, René A. Stein, S. Leibenzeder

Keywords:

Donors, Impurity

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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