Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC

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Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

495-500

DOI:

10.4028/www.scientific.net/MSF.117-118.495

Citation:

W. Götz et al., "Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC ", Materials Science Forum, Vols. 117-118, pp. 495-500, 1993

Online since:

January 1993

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