Multiplicity and Lattice Relaxation of DX Center in AlGaAs: Si Studied by Electron Emission Spectra under Pressure

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Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

447-452

DOI:

10.4028/www.scientific.net/MSF.117-118.447

Citation:

K. Takarabe et al., "Multiplicity and Lattice Relaxation of DX Center in AlGaAs: Si Studied by Electron Emission Spectra under Pressure ", Materials Science Forum, Vols. 117-118, pp. 447-452, 1993

Online since:

January 1993

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