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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Multiplicity and Lattice Relaxation of DX Center...

Multiplicity and Lattice Relaxation of DX Center in AlGaAs: Si Studied by Electron Emission Spectra under Pressure

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

447-452

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.447

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Online since:

January 1993

Authors:

K. Takarabe, H. Ashizawa, S. Minomura, H. Kato, Y. Watanabe, K. Matsuda

Keywords:

DX Center, Lattice Relaxation, Multiplicity, Pressure Effect

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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