Paper Titles

The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam
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Impurity Diffusion into GaAs through the SiO₂ Protective Layers
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Electron Beam Doping of Si and Zn Impurities into GaAs
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Effect of Hydrogen Passivation on Lightly n-Doped GaAs
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Free-Carrier Saturation in III-V Compound Semiconductors
p.435

The Sn- and Si-DX Centre Properties in Double Doped (Al,Ga)As
p.441

Multiplicity and Lattice Relaxation of DX Center in AlGaAs: Si Studied by Electron Emission Spectra under Pressure
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Persistent Photoconductivity and Electric-Field Quenching Related with DX Centers in AlGaAs/GaAs Heterostructure
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Photo-Induced Simultaneous Transformations of Shallow Donors and EL2 States in Semi-Insulating GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118Free-Carrier Saturation in III-V Compound...

Free-Carrier Saturation in III-V Compound Semiconductors

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Shallow Impurities in Semiconductors V

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Periodical:

Materials Science Forum (Volumes 117-118)

Pages:

435-440

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118.435

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Online since:

January 1993

Authors:

E. Tokumitsu, Makoto Konagai

Keywords:

Doping, DX Center, Free Carrier Saturation, Native Defect

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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