The Effect of Arsenic Vapor Pressure on Site Distribution of Silicon in Gallium Arsenide Grown by the Gradient Freeze Method

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Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

393-398

DOI:

10.4028/www.scientific.net/MSF.117-118.393

Citation:

K. Fujii et al., "The Effect of Arsenic Vapor Pressure on Site Distribution of Silicon in Gallium Arsenide Grown by the Gradient Freeze Method ", Materials Science Forum, Vols. 117-118, pp. 393-398, 1993

Online since:

January 1993

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$35.00

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