Shallow Donor States in InP - Electron-Spin-Resonance Induced Overhauser Shift -
p.369
p.369
Donor Concentration Dependence of GaP Luminescence
p.375
p.375
Various Configurations of Silicon-Related Defects in GaAs
p.381
p.381
Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations
p.387
p.387
The Effect of Arsenic Vapor Pressure on Site Distribution of Silicon in Gallium Arsenide Grown by the Gradient Freeze Method
p.393
p.393
Fermi Level Effect and Vacancy Contribution to the Outdiffusion of Si in GaAs
p.399
p.399
Carbon in LEC Grown GaAs Crystals
p.405
p.405
The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam
p.411
p.411
Impurity Diffusion into GaAs through the SiO2 Protective Layers
p.417
p.417
The Effect of Arsenic Vapor Pressure on Site Distribution of Silicon in Gallium Arsenide Grown by the Gradient Freeze Method
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 117-118)
Pages:
393-398
Citation:
Online since:
January 1993
Authors:
Keywords:
Price:
Сopyright:
© 1993 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: