Fermi Level Effect and Vacancy Contribution to the Outdiffusion of Si in GaAs

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Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

399-404

DOI:

10.4028/www.scientific.net/MSF.117-118.399

Citation:

H.-M. You et al., "Fermi Level Effect and Vacancy Contribution to the Outdiffusion of Si in GaAs ", Materials Science Forum, Vols. 117-118, pp. 399-404, 1993

Online since:

January 1993

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$35.00

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